| PART |
Description |
Maker |
| 2SA1252 |
High VEBO. Wide ASO and high durability against breakdown.
|
TY Semiconductor Co., Ltd
|
| UV131 |
Zinc-alloy durability
|
A-Data Technology
|
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| 3197 A3197ELT A3197EU A3197LLT A3197LU A3196LLT A3 |
PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED/ HIGH-TEMPERATURE/ OPEN-COLLECTOR HALL-EFFECT LATCH
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(保护型，工作于高温，集电极开路霍尔效应锁存器)
IC SENSOR QWHEEL ROTARY 14TSSOP
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(淇?????宸ヤ?浜??娓╋???????璺??灏??搴??瀛??)
Protected, high-temperature, hall-effect latch with active pull-down
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| 3141 A3143 UGN3120ELT UGN3120EUA UGN3120LLT UGN312 |
SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 敏感的霍尔效应开关高温作
IC SENSOR 1 CHAN QTOUCH SOT23-6
(UGN3141 - UGN3144) SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Sensitive Hall-Effect Switches, High-Temperature
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
http://
|
| MPXA6115A MPXH6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure
|
Motorola
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
| T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs
High temperature 10 A sensitive TRIACs
600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics
STMicroelectronics
|
| ENC102D-10A ENC112D-10A ENC820D-10A ENC220D-10B EN |
±15kV ESD Protected, 5V, Low Power, High Speed and Slew Rate Limited, Full Duplex, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; Temperature Range: -40°C to 85°C; Package: 16-QFN
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
STD MOV
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
|
Central Semiconductor, Corp.
|
| LP25-122-KT151W LP12-112-KT151W LP12-163-KT151W LP |
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1200 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 16000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 5100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1600 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 150 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 390 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 30 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 33 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.6 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 2.4 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.3 ohm, THROUGH HOLE MOUNT
RTD TEMP SENSOR-PLATINUM
RESISTOR, TEMPERATURE DEPENDENT, PTC, 75 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 20 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 24 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 82 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 6800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 180 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 820 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 680 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 22 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 11 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 13 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 56 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 160 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1.8 ohm, THROUGH HOLE MOUNT
|
RCD Components, Inc.
Golledge Electronics, Ltd.
RCD COMPONENTS INC
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
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